Gas sensing with self-assembled monolayer field-effect transistors
نویسندگان
چکیده
منابع مشابه
Monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors.
The mobility of self-assembled monolayer field-effect transistors (SAMFETs) traditionally decreases dramatically with increasing channel length. Recently, however, SAMFETs using liquid-crystalline molecules have been shown to have bulk-like mobilities that are virtually independent of channel length. Here, we reconcile these scaling relations by showing that the mobility in liquid crystalline S...
متن کاملField-Effect Transistors for Gas Sensing
This chapter reviews gas-sensitive field-effect transistors (FETs) for gas sensing. Although various types of gas sensors have been reported, this review focuses on FET-based sensors such as catalytic-gate FETs, solid electrolyte-based FETs, suspended-gate FETs, and nanomaterial-based FETs. For recognition of analytes in the gas phase, the combination of cross-reactive gas sensor arrays with pa...
متن کاملSelf-assembled monolayer-enhanced hydrogen sensing with ultrathin palladium films
Resistive-type palladium structures for hydrogen sensing remains as a research focus for their simplicity in device construction. We demonstrate that a siloxane self-assembled monolayer placed between a substrate and an evaporated ultrathin Pd film promotes the formation of small Pd nanoclusters and reduces the stiction between the palladium and the substrate. The resulting Pd nanocluster film ...
متن کاملElectrochemical impedance sensing of DNA at PNA self assembled monolayer
Monolayers of cysteine linked peptide nucleic acid (PNA) assembled on gold electrodes were investigated for the sensing of DNA recognition. The monolayer was characterized by cyclic voltammetry (CV). The electron transfer through the monolayers was investigated using electrochemical impedance spectroscopy (EIS) in the presence of target DNA and redox marker ions [Fe(CN)6] 3 /4 as hybridization ...
متن کاملTop-gate ZnO nanowire transistors and integrated circuits with ultrathin self-assembled monolayer gate dielectric.
A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer that has a thickness of 2 nm and efficiently isolates the ZnO nanowire from the top-gate electrodes. Inverters fabricated on a single ZnO nano...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Organic Electronics
سال: 2010
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2010.02.007